LPE In1−xGaxP1−zAsz (x∼0.12, z∼0.26) DH laser with multiple thin-layer (500 Å) active region

A liquid-phase-epitaxial (LPE) double-heterojunction (DH) laser structure with an ∼1-μm ’’active region’’ consisting of ≳20 In1−xGaxP1−zAsz and InP lattice-matched thin layers is described. The thin-layer dimensions are small enough (500 Å) to make quantum size effects relevant.