Simulation of stochastic doping effects in Si MOSFETs

MOSFET threshold voltage (V/sub T/) variation due to random variations in the number and position of dopant atoms is an increasingly important problem as device dimensions shrink and has received increasing attention. This paper describes a recently implemented 3-D Monte Carlo approach for modeling random dopant fluctuation effects in MOSFETs. We also describe the results of simulating dopant fluctuation effects in several different MOSFET structures.