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Development of silicon module with TSVs and global wiring (L/S=0.8/0.8m) | Synapse

May 1, 2009

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Development of silicon module with TSVs and global wiring (L/S=0.8/0.8m)

MSMasahiro SunoharaShinko Electric Industries (Japan)ASAkinori ShiraishiShinko Electric Industries (Japan)YTYuichi TaguchiTetra Corporation (United States)

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In recent years, in order to achieve high density and high transmission speed between chips, various kinds of silicon modules have been developed.

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Sunohara et al. (Fri,) studied this question.

synapsesocial.com/papers/6a2393e00f6fe640299ee50f https://doi.org/https://doi.org/10.1109/ectc.2009.5073992

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