Improved Emission Efficiency of 210-nm Deep-ultraviolet Aluminum Nitride Light-emitting Diode

We describe technology developed to improve the emission efficiency of our aluminum nitride (AlN) deep-ultraviolet light-emitting diode, which has a wavelength of 20 nm: the shortest wavelength ever observed from any semiconductor.The improvement utilizes the unique characteristic that the emission intensity greatly changes depending on the crystal plane of the emitting surface.