Homoepitaxial boron‐doped diamond with very low compensation

Abstract Homoepitaxial boron‐doped diamond layers grown by chemical vapor deposition on (100)‐oriented substrates are studied by Hall effect and resistivity measurements as a function of the temperature. In the range of 140–600 K, the hole concentration is well described by the neutrality equation in the regime of very low compensation, with the characteristic E i /2 activation energy, where E i is the ionization energy of boron acceptors. It indicates that the residual donor concentration is extremely low in the layers (<10 13 cm −3 ).