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Structural and Optoelectronic Characterization of RF Sputtered ZnSnN2 | Synapse

February 6, 2013Advanced Materials199 citations

Structural and Optoelectronic Characterization of RF Sputtered ZnSnN2

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LLLise LahourcadeOSRAM (Germany)NCNaomi C. CoronelCalifornia Institute of Technology KDKris T. DelaneyUniversity of California System

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Resumen

ZnSnN(2), a new earth-abundant semiconductor, is synthesized and characterized for use as a photovoltaic absorber material. Results confirm the predicted orthorhombic Pna2(1) crystal structure in RF sputtered thin films. Additionally, optical measurements reveal a direct bandgap of about 2 eV, which is larger than our calculated bandgap of 1.42 eV due to the Burstein-Moss effect.

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Cite This Study

Lahourcade et al. (Wed,) studied this question.

synapsesocial.com/papers/6a6c29df6f523709a024f87b https://doi.org/https://doi.org/10.1002/adma.201204718

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