Los puntos clave no están disponibles para este artículo en este momento.
Maintenance of higher doping levels in the AlxGa1−xAs barrier layers of double-heterostructure lasers permits one to use smaller molar fractions x, thereby minimizing the lattice mismatch between AlxGa1−xAs and GaAs. We estimate conduction-band and valence-band parameters of AlxGa1−xAs and show the relationship between laser threshold current and doping level.
D. L. Rode (1974) studied this question.