Key points are not available for this paper at this time.
A Schottky-barrier gate GaAs charge-coupled device (CCD) technology is described. Experimental devices fabricated in this technology have operated with charge transfer efficiency >0. 999/transfer and-have operated at clock frequencyf₂₋ = 500MHz. Implications of this technology in high-speed signal processing and in visible and near-infrared imaging are discussed.
Deyhimy et al. (1980) studied this question.