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110 GHz CMOS compatible thin film LiNbO3 modulator on silicon | Synapse

June 30, 2016Optics Express164 citationsOpen Access

110 GHz CMOS compatible thin film LiNbO3 modulator on silicon

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AMAndrew MercantePhase Sensitive Innovations (United States)PYPeng YaoEnergy Storage Systems (United States)SSShouyuan ShiPhase Sensitive Innovations (United States)

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Resumen

device layer with silicon and a novel tuning process that matches the propagation velocities between the propagating radio-frequency (RF) and optical waves. The resulting lithium niobate on silicon (LiNOS) modulator is demonstrated to operate from DC to 110 GHz.

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Cite This Study

Mercante et al. (2016) studied this question.

synapsesocial.com/papers/6a6f493afebe604dd708411d https://doi.org/https://doi.org/10.1364/oe.24.015590

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