Effect of p -doping on carrier lifetime and threshold current density of 1.3 μm GaInAsP/InP lasers by liquid-phase epitaxy

A correlation was found between the variation of the threshold current density and carrier lifetime with acceptor concentration in the active layer. An injected electron concentration of 2.5–3 × 1018/cm3, independent of the acceptor concentration in the active layer, was found at the lasing threshold.