292 nm AlGaN Single-Quantum Well Light Emitting Diodes Grown on Transparent AlN Base

We report the use of a novel transparent AlN base layer to achieve sub-300 nm electroluminescence from an AlGaN p - n junction single quantum well light emitting diode grown on sapphire by metal organic chemical vapor deposition. For unpackaged devices tested on wafer at a continuous current of 120 mA, an optical power of 2.4 µW was achieved. Peak emission was 292 nm, with very little secondary wavelength emission.