Integrated quantum well self-electro-optic effect device: 2×2 array of optically bistable switches

We demonstrate 2×2 arrays of optically bistable devices with very uniform optical characteristics. They are fabricated from an integrated self-electro-optic effect device structure consisting of a quantum well p-i-n diode grown in series with a load photodiode. Operating power can be optically controlled with a separate beam between ∼40 pW and 470 μW with associated switching times of ∼10 s and 2 μs.