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The adsorption of both atomic and molecular hydrogen on silicon films and single crystals has been studied. The kinetics of the processes as a function of coverage and gas pressure are discussed, and it is shown that in the case of adsorption of atoms, two types of adsorbed species exist. Data obtained for the areas of silicon films as a function of the number of silicon atoms evaporated are in good agreement with previous work.
Junhui Law (1959) studied this question.