Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region

By introducing a single-quantum-well active layer and a high-Al-content carrier blocking layer, the output power of an AlGaN-based ultraviolet light-emitting diode has been improved by one order of magnitude. Optical output of 1 mW was achieved at the emission peak wavelength of 341–343 nm.