Aluminum nitride (AlN) ceramic materials have relatively low thermal conductivity and poor heat dissipation performance, and are increasingly unsuitable for high-power LED packaging. In this study, diamond films were deposited on AlN ceramic substrates by microwave plasma chemical vapor deposition (MPCVD). The effects of different process parameters on the crystal quality, surface morphology and crystal orientation of diamond films were studied, and the high thermal conductivity of diamond was used to enhance the heat dissipation ability of AlN ceramic substrates. Finally, the junction temperature and thermal resistance of LED devices packaged on AlN ceramic–diamond composite substrate, AlN ceramic substrate and aluminum substrate were tested. The experimental results show that compared with the traditional aluminum and AlN ceramic substrates, AlN ceramic–diamond composite substrates show excellent heat dissipation performance, especially under high-power conditions.
Wei et al. (2025) studied this question.