September 23, 2025

Advancing semiconductor patterning with EUV hyper NA: opportunities and challenges

Key Points

Hyper NA technology enhances pattern shrink capability to 8 nm halfpitch in semiconductor designs, achieving improved performance.
Emerging EUV lithography scanners with NA ≥ 0.75 are crucial for supporting device miniaturization and increased density.
The analysis indicates that hyper NA could be key for semiconductor advancements projected beyond 2030 in industry roadmaps.
This study highlights both opportunities and challenges faced in integrating hyper NA systems into existing lithographic processes.

Abstract

Enhanced chip performance and miniaturization in the semiconductor industry are driven by improved lithographic capabilities, such as those of lithography systems with larger Numerical Aperture (NA). The emerging high NA Extreme Ultra Violet (EUV) lithography scanners increase the NA from 0.33 to 0.55, enabling continued shrink down to 8 nm halfpitch for lines/spaces. EUV systems with NA ≥ 0.75 (hyper NA) are being explored to support further cost -effective increases in device density. Our study demonstrates that hyper NA enables pattern shrink in advanced logic node designs projected in semiconductor roadmaps beyond year 2030.

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