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Abstract A high‐power thin film lithium niobate (TFLN) erbium‐doped waveguide amplifier (EDWA) is demonstrated with a maximum on‐chip output power of 113 mW and a gain of 16 dB. The on‐chip integrated EDWA is composed of large mode area (LMA) waveguide structures with a total length of 7 cm and a footprint of 1 × 1 cm 2 . Segmented LMA waveguides are connected with waveguide tapers to achieve on‐chip mode conversion, which maintains single‐mode propagation all over the EDWA even at the waveguide bends. The design leads to a significant increase in the amplified signal power by orders of magnitude and will open an avenue for applications such as on‐chip high‐power lasers and amplifier systems.
Bao et al. (Sat,) studied this question.