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Wide bandgap semiconductor (WBG) power electronic devices have broad application prospects in smart energy, but their widespread application still faces challenges. Transient Liquid Phase (TLP) bonding technology can improve the long-term reliability of WBG power electronic devices in high temperature, high pressure, and high-frequency environments. This paper studies the effects of different bonding temperatures and Cu porous thicknesses on the shear strength of welded joints formed by TLP bonding of Sn-58Bi/Cu porous/Sn-58Bi structures under air environments and pressureless conditions. During the bonding process, Cu porous covered with Sn-58Bi solder on the upper and lower sides is used as an intermediate layer to connect the copper plates on both sides. The shear strength of the solder joints gets stronger with temperature in the 150 °C to 250 °C range. When the bonding temperature is 200 °C and the thickness of the Cu porous is 0.3 mm, an excellent metal joint with a shear strength of 68.06 MPa is achieved, which can meet the requirements of power electronic devices.
Yu et al. (Mon,) studied this question.
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