Material properties and applications of InAs/InAsSb type-II superlattice in IR lasers and photodetectors

This talk reviews the research on InAs/InAsSb type-II superlattices and applications to IR lasers and photodetectors with the following highlights: 1) Review of the study of InAs/InAsSb T2SL and its application to IR lasers and photodetectors in the 90's. 2) Long minority carrier lifetimes were observed in MWIR and LWIR InAs/InAsSb T2SL. 3) Pressure-dependent photoluminescence experiments were conducted on a MWIR InAs/InAsSb T2SL structure to provide evidence for a defect level above the conduction band edge of InAs. 4) First InAs/InAsSb T2SL nBn photodetectors were demonstrated to cover both MWIR and LWIR bands. 5) Hole mobilities were measured.