Thermoelectric and Electronic Transport Properties of Thermal and Plasma-Enhanced ALD Grown Titanium Nitride Thin Films

Key Points

• Thin film titanium nitride demonstrates exceptional electrical conductivity, and thermal stability enhances its performance.
• Measured stability up to 400°C in ambient conditions, extending to 600–800°C under inert environments.
• Analysis utilized thermal and plasma-enhanced atomic layer deposition techniques for film growth and characterization.
• Potential applications in electronic devices highlight the promising use of titanium nitride in various operational environments.