Improving carrier transport aided by Sb doping enables high-efficiency DMF-processed CIGSSe solar cells with sub-thickness

Key Points

• The aim is to enhance carrier transport and efficiency in CIGSSe solar cells using Sb doping techniques.
• Utilized Sb doping to influence grain growth in CIGSSe materials.
• Constructed a gradient bandgap for improved performance.
• Applied DMF processing techniques for solar cell fabrication.
• Increased grain growth observed in the doped samples.
• Achieved a gradient bandgap contributing to higher efficiency.
• Enhanced carrier transport facilitated better solar cell performance.