TL, OSL and EPR studies in SrAl2Si2O8:Ce phosphor prepared by solid-state reaction method

• Ce-doped SrAl 2 Si 2 O 8 phosphor was synthesized and characterized by XRD, SEM, EDS, TL, OSL, and EPR. • The luminescence (TL/OSL) of the phosphor shows enhanced sensitization with 0.3 mol% Ce. • The kinetic parameters of the electron trap centers associated with the TL peaks were determined. • In the SrAl₂Si₂O₈:Ce phosphor, three defect centers associated with the O⁻ ion were identified by EPR, which are related to the TL peaks. This study analyzes Ce-doped SrAl 2 Si 2 O 8 phosphors synthesized using the solid-state reaction method. The luminescence properties were studied by thermoluminescence (TL) and continuous wave optically stimulated luminescence (CW-OSL). The sample doped with 0.3 mol% Ce and treated at 1300°C exhibits the highest luminescence intensity. The 200°C peak shows a linear dose response. On the other hand, the OSL intensity shows sublinear behavior with dose. Electron paramagnetic resonance (EPR) investigations were conducted to identify radiation-induced defect centers and to elucidate their correlation with the TL and OSL processes. The EPR spectrum reveals the presence of two distinct paramagnetic centers, while thermal annealing experiments indicate the presence of a third center. Center I, exhibiting a characteristic multiline hyperfine structure, is attributed to an O⁻ ion. Centers II and III are likewise assigned to O⁻ ions, suggesting the involvement of multiple oxygen-based defect centers in the luminescence mechanism.