The possibility of combining TM and TE modes in a microwave plasma resonator for the growth of diamond with a doped δ-layer of p-type (boron) and minimal thickness by the CVD method has been considered. A model based on the integral relations method allows estimating the parameters of the resulting plasma ball, as well as the position of the substrate bearing the diamond growth surface relative to the plasma ball, and the dependence of this position on gas pressure—particularly the preference for low-pressure operation (not accounted for in applied plasma packages) for better adherence of the plasma ball to the substrate.
N.I. Alekseev (Wed,) studied this question.