This article deals with the topic of importance of correct switching conditions selection for driving silicon carbide power MOSFET in various configurations. The results were obtained by the simulation method in CADENCE OrCAD version 17.2. The basic configuration used for all simulations was the double pulse test (DPT) topology which was modified as needed. For the purpose of this test, the silicon carbide MOSFET NTH4L022N120M3S from Onsemi manufacturer was selected due to very good dynamic parameters. To show the clear difference between switching conditions and their results, two positive driving voltages were used, 10V and 20V in combination with three negative voltages -10V, -5V and 0V. The simulation used parametric simulation by changing selected resistors in the range from 1Ω to 40Ω. This allowed the use and comparison of six driving voltage ranges and their influence on the switching losses within the wide range of resistance. Based on the measured values and plotted graphs, the most suitable U GS driving range for controlling the SiC MOSFET transistor is -10V/20V in the configuration with turn-on and turn-off resistors and diodes. This conclusion is supported by the analysis of the total loss graphs for all tested ranges and by the relatively smooth waveforms of the turn-off process.
Śvárna et al. (Thu,) studied this question.