First-principles analysis of biaxial-strain reducing ionization energy in a doped diamond

Key Points

• Biaxial strain significantly lowers the ionization energy in doped diamond, enhancing its semiconductor properties.
• The analysis indicates a decrease in ionization energy of approximately 20% under optimal strain conditions.
• First-principles analysis was used to model the electron mobility and ionization energy changes in doped diamond.
• This study highlights the potential of manipulating strain in semiconductor materials for advanced electronic applications.