Preparation of highly transparent and low resistive indium tin oxide thin film by direct current low-power sputtering

Key Points

• Highly transparent indium tin oxide thin films were successfully prepared using direct current low-power sputtering, attaining significant optical clarity.
• The resistivity of the films was notably low, measured at 3.95 x 10^-4 ohm-cm, which enhances their utility for electronic applications.
• Direct current low-power sputtering technique was employed to create the thin films, ensuring desirable properties such as low resistivity and high transparency.
• These findings may enable advancements in electronic devices and components utilizing indium tin oxide materials in various applications.