What question did this study set out to answer?

This research aims to enhance the efficiency of chemical mechanical polishing using a novel core-shell abrasive with a heterojunction design.

March 7, 2026

Heterojunction-Enhanced CeO 2 -Based Core–Shell Abrasives for High-Efficiency Photoassisted Chemical Mechanical Polishing

Key Points

This research aims to enhance the efficiency of chemical mechanical polishing using a novel core-shell abrasive with a heterojunction design.
Developed a core-shell abrasive with Ce-doped SnO2 as core and La-doped CeO2 as shell.
Utilized in situ Ce3+ enrichment and a type-II heterojunction for electron transfer.
Conducted both experimental characterizations and first-principles calculations to understand the mechanisms.
Achieved material removal rates (MRR) of 608 nm/min for TFT-LCD glass and 315 nm/min for Si wafers.
Reduced surface roughness (Ra) to 0.277 nm and 0.190 nm for glass and Si, respectively.
Outperformed commercial CeO2 abrasives by 129.56% in MRR for glass and 137.84% in MRR for Si wafer.

Abstract

Chemical mechanical polishing (CMP) traditionally relies on a synergistic interplay between mechanical abrasion and chemical etching, yet the limited chemical activity of conventional abrasives often restricts efficiency. Herein, a photoassisted in situ Ce3+ enrichment strategy is established and applied in a core-shell abrasive with Ce-doped SnO2 (CTO) as core and La-doped CeO2 (LCO) as shell (CTO@LCO). A type-II heterojunction at the core-shell interface facilitates efficient photogenerated electron transfer from CTO to LCO, highly promoting the chemical activity of the LCO shell. Combined with the robust mechanical action of faceted CTO core, the CTO@LCO abrasive exhibits remarkable material removal rate (MRR) of 608 nm/min for TFT-LCD glass and 315 nm/min for Si wafer, and simultaneously reduced surface roughness (Ra) of 0.277 and 0.190 nm, respectively, outperforming commercial CeO2 abrasives by 129.56% (137.84%) in MRR and 45.02% (61.83%) in Ra. Comprehensive experimental characterizations and first-principles calculations shed light on the mechanism of doping-induced band structure regulation and heterointerface design in such photoassisted chemical mechanical polishing (PACMP). This work opens a way to in situ chemically activate abrasives for high-performance CMP toward advanced ultraprecision manufacturing.

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