The paper presents borophene nanoribbons (BNRs) as a strong candidate for next‐generation on‐chip interconnects, addressing the scaling, surface roughness, and thermal limitations of copper and the performance constraints of graphene at sub‐nanometer technology nodes. Quantum equivalent‐circuit models and an analytical mean free path formulation demonstrate that BNRs exhibit higher normalized conductance and lower effective resistivity, particularly with Fermi energy tuning in the range of 0–0.4 eV. Extending this analysis to multilayer BNRs, temperature‐aware analytical models for armchair and zigzag configurations reveal low resistance, favorable inductance, and capacitance over a wide temperature range (250–500 K) at the 7 nm node. Benchmarking against graphene and conventional copper interconnects shows that MLBNRs deliver comparable or superior electrical and thermal performance, establishing borophene as a highly promising material for future nanoscale interconnect applications.
Agarawal et al. (Mon,) studied this question.
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