The comparative analysis of the voltage-ampere characteristics and trap parameters is carried out within the framework of the spatial charge-limited current model in metal-insulator-semiconductor structures ITO/GeOx(z)SiO2(1–z) (0.25 ≤ z ≤ 1)/Si with germanosilicate films obtained by electron beam evaporation of germanium oxide and silicon oxide powders in vacuum and deposition on n+-Si and p+-Si substrates. It has determined that the MIS structures of ITO/GeOx(z)SiO2(1–z)/Si have a bipolar type of conductivity. The hole type of conductivity dominates in MIS structures with a parameter z > 0.5, and the electronic type of conductivity dominate in structures z ≤ 0.5. It is also determined that the films have at least two types of traps with localized levels energy.
Yushkov et al. (Mon,) studied this question.