Comparison of optical and transport characteristics due to symmetrical and asymmetrical interface-optical-phonon modes of asymmetrical Gaussian GaAs/AlAs quantum wells for both AlAs-barrier and GaAs-well layers

Key Points

• The study aims to compare the effects of symmetrical and asymmetrical interface-optical-phonons on the characteristics of GaAs/AlAs quantum wells.
• Comparison of optical and transport properties of asymmetrical Gaussian GaAs/AlAs quantum wells.
• Investigation of electron interaction with symmetrical and asymmetrical interface-optical-phonons.
• Analysis involving different barrier and well materials.
• Demonstrated variations in optical characteristics due to interface-optical-phonon modes.
• Identified differences in transport properties influenced by the nature of phonon interactions.
• Revealed that these interactions significantly affect the efficiency of quantum wells.