Flexible RRAM utilizing CdSe Quantum dot-P4VP Composites and Graphene Layer

Key Points

• This research aims to create a flexible resistive random-access memory (RRAM) for neuromorphic applications.
• Developed a composite of CdSe quantum dots and P4VP
• Integrated a graphene interfacial layer
• Assessed the device's reliability and flexibility
• Showed improved synaptic updates in a linear manner
• Demonstrated enhanced reliability compared to traditional systems
• Exhibited flexibility suitable for wearable technology