January 9, 2017

In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN substrates

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Abstract

In this letter, we report on high breakdown voltage in situ oxide, GaN interlayer-based vertical trench MOSFETs (OG-FETs) on bulk GaN substrates. Following our previous work on OG-FETs on GaN on sapphire, utilizing a low damage gate-trench etch and using bulk GaN substrates, a breakdown voltage of 990 V with an ON-resistance 2.6 mQ · cm 2 , was achieved. Without edge termination, a high breakdown field of 1.6 MV/cm was achieved in these devices.

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Gupta et al. (Mon,) studied this question.

synapsesocial.com/papers/69d89ad58c03fbaff8befa3b https://doi.org/https://doi.org/10.1109/led.2017.2649599

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