A Novel Electrochemical Exfoliation Route to Tailor Graphene Bandgap through Silicon Incorporation: Semi-metallic to Semiconducting Transition

Key Points

• The aim is to produce graphene-silicon composites with tailored bandgap properties for potential electronic applications.
• Produced graphene-silicon composites through powder compaction and low-temperature sintering.
• Utilized electrochemical exfoliation to create materials with variable band gaps.
• Examined the transition from semi-metallic to semiconducting characteristics.
• Achieved successful transition of graphene from semi-metallic to semiconducting through silicon incorporation.
• Demonstrated the ability to tailor the bandgap of the composites based on processing parameters.