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The pure and Al-doped NiO nanorod-flowers with uniform sizes and well-defined morphologies were synthesized for the first time by a facile solvothermal reaction. As the gas sensing materials of MOS gas sensors, their sensing properties were investigated systematically. The results indicated that the 2.15 at% Al-doped NiO nanorod-flowers showed improved gas sensing properties compared to those of pure NiO nanorod-flowers. The incorporation of Al ions with NiO nanocrystals adjusts the carrier concentration, and induces the change of the oxygen deficiency and chemisorbed oxygen of NiO nanorod-flowers. Thus, the doping of Al3+ into NiO nanorod-flowers should be a promising method for designing and fabricating the high performance gas sensor.
Wang et al. (Tue,) studied this question.