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June 4, 2001Applied Physics Letters533 citations

Molecular random access memory cell

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MRMark A. ReedJCJing ChenARAdam M. Rawlett

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Abstract

Electronically programmable memory devices utilizing molecular self-assembled monolayers are reported. The devices exhibit electronically programmable and erasable memory bits compatible with conventional threshold levels and a memory cell applicable to a random access memory is demonstrated. Bit retention times 15 min have been observed.

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Reed et al. (2001) studied this question.

synapsesocial.com/papers/69ea3952f7035585afa81a55https://doi.org/10.1063/1.1377042
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