Indium oxide was mechanically activated, and its effect on the operation of semiconductor gas-sensitive devices was evaluated. The structural and morphological characteristics of In2O3 following mechanical activation were examined. The powder treatment produced a defective particle surface structure, enhanced specific surface area, and improved material diffusion properties. Experimental evidence indicates a substantial enhancement in the reactivity of indium oxide with diverse gases, stemming from alterations in grain structure and the formation of novel adsorption sites. The results obtained demonstrate that mechanoactivation is a promising technological tool for the development of energy-efficient sensors.
Ikim et al. (Thu,) studied this question.