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The temperature dependence of the optical constants for amorphous silicon (a-Si) is studied for two different sample thicknesses at two infrared wavelengths. It is observed that the extinction coefficient of a-Si can increase significantly with temperature in the strong absorption regime. In addition, using the Mott–Davis formula, results are obtained for the variation of the optical gap energy for a-Si with temperature, with similar feature observed for both amorphous and crystal silicon.
Do et al. (Mon,) studied this question.