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The formation process of InAs quantum dashes and quantum dots (QDs) grown on quaternary InAlGaAs surfaces lattice-matched to n-type InP(100) are investigated. A clear trend of the InAs to form dashes or dots depending on the species of supplied arsenic could be demonstrated. Using As4, elongated quantum dashes can be observed. Changing the growth mode to As2 molecules enables a shape transition from dashes to dome-shaped QDs. The dot ensembles exhibit improved photoluminescence (PL) intensity and linewidth over their elongated counterparts. With this basic concept, low temperature PL linewidths as low as 23 meV have been achieved.
Gilfert et al. (Mon,) studied this question.