Abstract This study reports the fabrication and comprehensive analysis of an Al/NC/p-Si metal–insulator-semiconductor (MIS) structure, incorporating nanocellulose (NC) as an insulating interfacial layer at the metal/semiconductor junction for the first time. The NC material was rigorously characterized through dynamic light scattering (DLS), zeta potential analysis, ultraviolet–visible (UV–Vis) absorption spectroscopy, Raman spectroscopy, and scanning transmission electron microscopy (STEM). The electrical properties of the Al/NC/p-Si structure were systematically investigated via the current–voltage (I-V) and capacitance–voltage (C-V) measurements under dark and illuminated conditions at room temperature. The I-V analysis revealed an ideality factor (n) of 1.72 and a zero-bias barrier height (Φ B ) of 0.80 eV, with deviations from ideality ascribed to the NC interfacial layer, interfacial state distribution, and elevated series resistance within the p-Si substrate. The series resistance (Rs) was further evaluated using the Norde and Cheung methodologies. The frequency-dependent analyses of the capacitance (C-V) and conductance (G-V) characteristics were performed, with results critically compared to literature. These findings underscore the promising insulating properties of nanocellulose and highlight its potential for application in electronic devices.
Bilge et al. (Fri,) studied this question.