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Abstract Carrier recombination at the buried SnO 2 /perovskite interface limits the efficiency and stability of n‐i‐p‐structured perovskite solar cells (PSCs). Herein, we report an In 2 O 3 interfacial layer with the distinctive structure of the monolithic compact/nanostructured bilayer. The partial hydrolysis nature of the In 3+ ion enables the formation of nanorods on top of the compact In 2 O 3 layer when spin‐coating the In(NO 3 ) 3 aqueous solution. This novel interfacial layer reduces the pinholes of the SnO 2 film and increases the contact area between the perovskite and electron transport material. Therefore, PSCs with the incorporation of the interfacial layer demonstrate enhanced electron extraction and suppressed carrier recombination. Consequently, the champion device achieves a power conversion efficiency of 23.87% with a high fill factor of 82.14%. The optimized device also shows robust operational stability, retaining over 80% of the initial power conversion efficiency after working at the maximum power point for over 500 h under continuous one‐sun illumination.
Tian et al. (Thu,) studied this question.