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A photoelectric GaAs integrated circuit that converts light intensity to digital signal frequency has been fabricated using the GaAs MES-FET process. The circuit includes a metal-semiconductor-metal photodiode (MSM-PD), a preamplifier (PA), a Schmitt trigger (ST), a flip-flop (FF) (1-bit digital counter) and a reset (R st ) FET. This sensor cell has a wide dynamic range of over 5 decades of incident light power and a ? characteristic suitable for an image pickup device.
Tanaka et al. (1993) studied this question.