Describes a 512 Mb PROM using a transistorless memory cell with an antifuse and diode, achieving high density through 8-layer stacking.
A 3.3 V, 512 Mb PROM uses a transistorless memory cell containing an antifuse and diode. A bit area of 1.4F/sup 2/ including all overhead is achieved by stacking cells 8 high above the 0.25 /spl mu/m CMOS substrate. Read bandwidth is 1 MB/s and write bandwidth is 0.5 MB/s. A 72 b Hamming code provides fault tolerance.
Crowley et al. (2003) studied this question.