January 1, 2023Open Access

Inherent area-selective atomic layer deposition of ZnS

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Abstract

Development of ALD processes with inherent selectivity is the most straightforward approach for self-aligned AS-ALD where the ALD process itself leads to immediate nucleation on certain substrate materials while long nucleation delays on others.

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Zhang et al. (Sun,) studied this question.

synapsesocial.com/papers/6a1b46ff0ea968f653abaef3 https://doi.org/https://doi.org/10.1039/d3dt01435e

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