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Pb(Zr,Ti)O3 (PZT) film with a band gap of 3.6 eV was prepared on In2O3:Sn (ITO) coated glass, and then an amorphous silicon (a-Si) film with a narrow band gap of 1.8 eV was deposited on the PZT/ITO/glass. The short-circuit current of Ag/a-Si/PZT/ITO/glass sample is 2.56 mA cm−2, about 50 times greater than that of Pt/PZT/ITO/glass sample. The energy level of the a-Si film is well matched with that of PZT film, which is beneficial to the transport of UV-visible light-induced charges in the Ag/a-Si/PZT/ITO/glass sample. The photovoltaic output can be tuned by changing the dopant type of the a-Si film, and the maximum photoelectric conversion efficiency is measured to be up to 1.25% in the PZT film with an n-type a-Si film (phosphorus doped).
Zheng et al. (Wed,) studied this question.
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