April 14, 2015Open Access

Reliability of InAs/GaAs Quantum Dot Lasers Epitaxially Grown on Silicon

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Abstract

We present the first reliability study of InAs/GaAs self-assembled quantum dot lasers epitaxially grown on Ge/Si substrates. Some devices maintain lasing oscillation after more than 2700 h of constant current stress at 30 °C, longer than any previous life tests of GaAs lasers epitaxially grown on silicon. No catastrophic failures were observed. The lasers were characterized to gain insight on the aging mechanism.

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synapsesocial.com/papers/6a1ebc21bf2a5d44faaf3fec https://doi.org/https://doi.org/10.1109/jstqe.2015.2418226

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