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High-speed resistive switching was observed in a TiO2/TiN nano-crystalline thin film sandwiched between platinum electrodes. A low resistance state was achieved by applying a single negative 2.0-V amplitude 20-ns wide electric pulse, while a high resistance state was achieved by applying a single positive 2.2-V amplitude 30-ns wide electric pulse. So-called forming process, heating bit material by current flow to form conductive filament path before the resistive switching operation was not required. There was an approximately 40,000% increase in resistive change that was repeatedly obtained in the system.
Fujimoto et al. (Wed,) studied this question.
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