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We have developed a 150°C technology for amorphous silicon thin-film transistors (a-Si:H TFTs) on polyimide substrates deposited by plasma enhanced chemical vapor deposition. The silicon nitride gate dielectric and the a-Si:H channel material were tailored to provide the least leakage current and midgap defect density, respectively. In addition, we conducted experiments on the TFT structure and fabrication with the aim of obtaining high electron mobility. TFTs with back-channel etch and channel-passivated structures were fabricated on glass or 51 μm thick polyimide foil. The a-Si:H TFTs have an on/off current ratio of ∼10 7 and an electron mobility of ∼0.7 cm 2/V s.
Glesková et al. (Mon,) studied this question.
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