What question did this study set out to answer?

The aim is to design an efficient X-band CMOS RF transceiver for data communication applications.

June 11, 2026Open Access

Fully Integrated X-Band CMOS RF Transceiver for Data Communications

WJWon-il Jang YKYong-Ho Kim GJGu JungKwangwoon University

Key Points

The aim is to design an efficient X-band CMOS RF transceiver for data communication applications.
Designed using a 65 nm CMOS process with a direct-conversion architecture.
Incorporated various components: RF front ends, frequency synthesizers, baseband amplifiers, ADCs, DACs, and digital blocks.
Measured gain, noise figure, output power, and power consumption during operational tests.
Measured gain exceeds 90 dB, and noise figure is below 5.5 dB.
Maximum output power reaches over 8 dBm, with OIP3 exceeding 16 dBm.
Power consumption is 287 mW in transmitter mode and 178 mW in receiver mode for a supply voltage of 1.2 V.

Abstract

This paper presents the design of an X-band complementary metal-oxide-semiconductor (CMOS) radio frequency (RF) transceiver integrated circuit (IC) for data communications, which comprises RF front ends, frequency synthesizers, baseband amplifier (BBA) blocks, analog-to-digital converter and digital-to-analog converter (ADC/DAC), and digital front-end blocks. The receiver is designed with a direct-conversion architecture, using a 65 nm CMOS process. The dimensions of the die are 5×5 mm. The RF circuits achieves sufficient gain and electrostatic discharge (ESD) reliability using an on-chip transformer. The measured gain and noise figure (NF) of the receiver are over 90 dB and below 5.5 dB, respectively. The maximum output power and output third-order intercept point (OIP3) of the transmitter exceed 8 dBmand 16 dBm, respectively. The power consumed by the transmitter and receiver modes are 287 mW and 178 mW, respectively, for a 1.2 V supply.

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