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This research examines how varying oxygen flow rates affect the optoelectronic characteristics of SnO2 thin films.

June 15, 2026Open Access

Effects of Oxygen Flow Rate on Optoelectronic Characteristics of SnO2 Thin Films for Application to Optical Sensors

Key Points

This research examines how varying oxygen flow rates affect the optoelectronic characteristics of SnO2 thin films.
Thin films of SnO2 were deposited on glass via RF magnetron sputtering.
Oxygen flow rates, sputtering power, and deposition time were controlled, followed by thermal treatment at various temperatures.
Parameters analyzed included thickness, electrical conductivity, optical transmittance, and figure of merit.
Films with an oxygen flow rate of 5 sccm exhibited a minimum resistivity of 3.19 × 10 -2 Ω•cm.
The optimal figure of merit was recorded at 7.43 × 10 -5 Ω -1.
These films demonstrated promising optoelectronic properties for sensor applications.

Abstract

In this study, tin oxide (SnO 2 ) thin films were deposited on glass substrates by RF magnetron sputtering, with process parameters optimized by adjusting the oxygen flow rate.Subsequently, thermal treatment was performed at various temperatures in a vacuum environment.The thickness, electrical conductivity, optical transmittance, and figure of merit (FOM) of the films were analyzed.The results indicate that the films deposited with an oxygen flow rate of 5 sccm, a sputtering power of 80 W, and a deposition time of 30 min, followed by annealing at 200 ℃, exhibited the highest performance.Specifically, the films achieved a minimum resistivity of 3.19 × 10 -2 Ω•cm and an optimal FOM of 7.43 × 10 -5 Ω -1 .These findings demonstrate excellent optoelectronic properties, suggesting high potential for applications in optoelectronic sensor materials.

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