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We report on deep ultraviolet light emitting diodes using AlGaN multiple quantum well active regions and with peak emission at 280 nm. A new buffer layer and active region design resulted in flip-chip devices with continuous wave powers as high as 0.85 mW for a pump current of 20 mA and a record external quantum efficiency over 1%. The power saturated at 5 mW for a dc pump current of 200 mA.
Sun et al. (2004) studied this question.